Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• , large ion doses lead to gas agglomeration and the formation of bubbles, manifesting as strong surface swelling [23]. Furthermore, the associated sputter rate of light ions is roughly an order of magnitude smaller than that of Ga ions [21][22]. In addition, the low ion mass has further implications. The

• manufacturer). Placing the crossover into the aperture leads to the largest possible current but also to the most divergent beam. Placing the crossover above the aperture reduces not only the beam current but also all image errors by cutting off non-paraxial radiation. While the local sputter rate depends

• strongly on the primary ion flux and, therefore, the beam current, the fidelity of the structures requires an optimum beam profile. Hence, in patterning, typically, a compromise between the optimum beam properties and the largest possible sputter rate has to be found. Usually, the beam path is inferred

Imaging of SARS-CoV-2 infected Vero E6 cells by helium ion microscopy

• Natalie Frese,
• Patrick Schmerer,
• Martin Wortmann,
• Matthias Schürmann,
• Matthias König,
• Michael Westphal,
• Friedemann Weber,
• Holger Sudhoff and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 172–179, doi:10.3762/bjnano.12.13

• , residual gas as well as the specimen itself are considered the main contributors of hydrocarbons [32][33]. Due to the much larger mass of He+ ions compared to electrons, their sputter rate is typically much higher. Since organic compounds are ablated from the sample surface, hydrocarbon deposition is

Fabrication of phase masks from amorphous carbon thin films for electron-beam shaping

• Lukas Grünewald,
• Dagmar Gerthsen and
• Simon Hettler

Beilstein J. Nanotechnol. 2019, 10, 1290–1302, doi:10.3762/bjnano.10.128

• transition between SixNy and aC was observable. This procedure leaves a free-standing aC thin film with slight inhomogeneities (Figure 3a), which are attributed to an inhomogeneous, grain-orientation-dependent sputter rate of the nanocrystalline Pt due to ion-channeling effects [30]. The second method uses

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• tubes, the sputter rate could be higher or comparable to the damage accumulation rate, thereby avoiding large damage leading to a reduction of sixfold rings in the MWCNTs. For He irradiation, the sputter yield at the bottom surface of the sample depends far less on fluence than for Ne irradiation due to

• the low sputter rate. However, there is a significant dependence on the sample thickness. It increases from 3.3 × 10−2 for the 10 nm to 4.3 × 10−2 for the 30 nm sample up to 1.3 × 10−1 for the 200 nm sample (cf. Supporting Information File 1). Hence, they are comparable to the Ne sputter yields at low

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• = 240 nm, known from SEM inspection (related sputter time tref = 224 s). This value is taken as a reference in determination of the remaining thicknesses da (remaining after etching and sputtered during the SIMS process) of the sample pieces I, II, III, and IV, assuming an identical sputter rate for the

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• become narrower and the aspect ratio of the structure is not preserved during the SIMS analysis. Mg(OH)2 nanoclusters incorporated inside a polymer matrix Due to the large differences in sputter rate from analysing various materials and material phases, the accurate co-localisation of nanoparticles

• multiple phases with large differences in sputter rate, the volume of sputtered material could be reconstructed more accurately. PVP/PS polymer blend after Cs+ bombardment of 1.02 × 1016 ions/cm2: The SIMS recorded secondary ion intensity and the AFM recorded topography of the area of interest are

• of the TiCN cermet. Keywords: alloy; atomic force microscopy (AFM); correlative microscopy; differential sputtering; in situ; multimodal imaging; nano-cluster; polymer blend; secondary ion mass spectrometry (SIMS); scanning probe microscopy (SPM); SIMS artefacts; sputter-induced effects; sputter

Plasma-assisted synthesis and high-resolution characterization of anisotropic elemental and bimetallic core–shell magnetic nanoparticles

• M. Hennes,
• A. Lotnyk and
• S. G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 466–475, doi:10.3762/bjnano.5.54

• chamber walls, an assumption which is supported by calculations of Cu diffusivity in buffer Ar by using the Chapman–Enskog theory [33], or the sputter rate is incorrectly determined by neglecting collisional processes of Ar-ions on their way to the target. This shows that, in order to gain a better